![]() ![]() The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. Check ratio of carbonate C1s intensity relative to metallic species, e.g., in a CaCO 3 sample, the observed Ca / CO 3 2- ratio should be 1. Metal carbonate peak tends to be narrower than typical ester peak. It was found that the sputtered Si-C films are amorphous on Ti6Al4 V under the present deposition conditions. Ester component tends to be of a similar intensity to C-O in adventitious carbon spectra and much weaker than C-C component. The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. Three kinds of C bonds have been also observed in -Si 3 N 4 powders 2, 25. C-Si and C-N bonds were not observed in this state. Two types of carbon bonds in addition to dominant C-H peak are located at 288.2 eV and 286.3 eV corresponding to CO and C-O. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). Three peaks were decomposed from measured XPS spectrum and identified. ![]() SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4 V substrate with a pre-deposited Cr bond layer. ![]()
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